Simulation and Experimental Results of Irradiated Power Diodes

An advanced recombination model based on the Shockley-Read-Hall-statistics with full trap dynamics is used for the simulation of irradiated power diodes. The model makes use of the rate equations which also take into account the dynamic effects in the space charge region of the power devices. The high-level lifetime calculated from DLTS (Deep Level Transient Spectroscopy) data does not agree well with the lifetime determined by lifetime measurements. An agreement is achieved by means of a temperature dependent capture coefficient of the dominating recombination center E(90K), calculated from the lifetime measurement results. Simulations and measurements are done to determine the dependencies of reverse recovery current maximum and reverse recovery charge on temperature. By use of the calculated capture coefficient, a sufficient agreement between simulation and measurement is achieved.